Finger metal oxide metal capacitor structures
US8963286B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2012 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | May 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A finger metal oxide metal (MOM) capacitor includes an outer conducting structure defined in a plurality of metal layers and a plurality of via layers of an integrated circuit. First and second side portions include a plurality of first and second finger sections extending in the plurality of metal layers and first and second hole vias connecting the first and second finger sections, respectively. A middle portion connects the first and second side portions. An inner conducting structure is defined in the plurality of metal layers and the plurality of via layers of the integrated circuit. A plurality of “T”-shaped sections are defined in the plurality of metal layers and third hole vias connecting the plurality of “T”-shaped sections. Middle portions of the plurality of “T”-shaped sections extend towards the middle portion and between the first side portion and the second side portion of the outer conducting structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.