Integrated-circuit amplifier with low temperature rise
US8963645B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2012 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Mar 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/18
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An integrated circuit amplifier comprises: a first planar substrate having an upper surface and a lower surface; a second planar substrate having an upper surface and a lower surface, the lower surface of the second planar substrate physically affixed to the upper surface of the first planar substrate; at least one transistor pair comprising a first and second transistor, formed in the upper surface of the second planar substrate; and a conductor electrically coupling a drain electrode of the first transistor to a source electrode of the second transistor. The first substrate material may have a higher thermal conductivity than the second substrate material. The first material may be Silicon Carbide and may have a thickness of about 10 mils. The second material may be Gallium Arsenide and may have a thickness of about 1 to 2 mils.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.