Variable bandgap modulator for a modulated laser system
US8964804B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2013 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Aug 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34306
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A modulated laser system generally includes a light emission region, a modulation region having a plurality of semiconductive layers, at least one of which includes a quantum well layer having a variable energy bandgap, and an isolation region separating the light emission region and the modulation region. The laser may be an electro-absorption modulated laser, the light emission region may include a distributed feedback laser, and the modulation region may include an electro-absorption modulator. The laser may be manufactured by forming a lower semiconductive buffer layer on a substrate, an active layer including one or more quantum well layers having the variable energy bandgap on or above the lower semiconductive buffer layer, an upper semiconductive buffer layer on or above the active layer, a contact layer on or above the upper semiconductive buffer layer, and an isolation region separating the light emission region and the modulation region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.