Patent · US Active

Arrays of metal and metal oxide microplasma devices with defect free oxide

US8968668B2 · kind B2 · utility

3Cited by
6References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 20, 2012
Grant dateMar 3, 2015
Priority date
Expiry dateJul 23, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH05H1/2418
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A microplasma device of the invention includes a microcavity or microchannel defined at least partially within a thick metal oxide layer consisting essentially of defect free oxide. Electrodes are arranged with respect to the microcavity or microchannel to stimulate plasma generation in said microcavity or microchannel upon application of suitable voltage and at least one of the electrodes is encapsulated within the thick metal oxide layer. Large arrays can be formed and are highly robust as lack of microcracks in the oxide avoid dielectric breakdown.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.