Methods of fabricating a semiconductor device with capacitors using mold structure and protection layer
US8969167B2 · kind B2 · utility
8Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2013 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | Jul 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A method of fabricating a semiconductor device with capacitors may include forming a mold structure on a lower structure, patterning the mold structure to form a plurality of holes exposing the lower structure, forming a protection layer on sidewalls of the mold structure exposed by the holes, forming lower electrodes in the holes provided with the protection layer, removing the mold structure to expose the protection layer, removing the protection layer to expose sidewalls of the lower electrodes, and sequentially forming a dielectric film and an upper electrode on the lower electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.