CMP slurry and a polishing method using the same
US8969204B2 · kind B2 · utility
5Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2009 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | Feb 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76229
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention relates to a CMP slurry that is able to reduce dishing generation, when it is applied to polishing or planarization of silicon oxide layer, for example, and a polishing method.The CMP slurry includes a polishing abrasive, a linear anionic polymer, a compound including a phosphoric acid group, and water, and the ratio of CMP polishing speed to a silicon oxide layer: CMP polishing speed to a silicon nitride layer is 30:1 to 50:1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.