Use of a conductive composition containing lead—tellurium-based oxide in the manufacture of semiconductor devices with lightly doped emitters

US8969709B2 · kind B2 · utility

Assignee

• E.I. DU PONT DE NEMOURS AND COMPANY · US

Inventors

• Brian J. Laughlin · Apex, US
• Kurt Richard Mikeska · Wilmington, US
• Carmine Torardi · Wilmington, US
• Paul Douglas Vernooy · Hockessin, US

Key dates

• Filing date: Aug 30, 2012
• Grant date: Mar 3, 2015
• Expiry date: May 31, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/546
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

The present invention provides a process for using a thick-film conductive paste composition to form an electrode on a silicon semiconductor device, e.g, a photovoltaic cell, containing a lightly doped emitter. The thick-film paste comprises a source of an electrically conductive metal and a Pb—Te-based oxide dispersed in an organic medium. Also provided are devices made by the process and a photovoltaic cell comprising a lightly doped emitter and an electrode formed from the thick-film conductive paste composition.