Photodetecting structure with photon sensing graphene layer(s) and vertically integrated graphene field effect transistor
US8969779B2 · kind B2 · utility
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2References
15Claims
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Key dates
| Filing date | Feb 11, 2011 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | Jan 3, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J1/0488
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In accordance with an example embodiment of the present invention, an apparatus is provided, including a photodetecting structure with one or more photon sensing layers of graphene; and an integrated graphene field effect transistor configured to function as a pre-amplifier for the photodetecting structure, where the graphene field effect transistor is vertically integrated to the photodetecting structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.