Semiconductor light emitting device

US8969889B2 · kind B2 · utility

Assignee

• Stanley Electric Co., Ltd. · JP

Inventors

• Ryosuke Kawai · Yokohama, JP
• Mamoru Miyachi · Tokyo, JP
• Tatsuma Saito · Tokyo, JP
• Takako Hayashi · Yokohama, JP
• Takanobu Akagi · Yokohama, JP

Key dates

• Filing date: Nov 13, 2013
• Grant date: Mar 3, 2015
• Expiry date: Nov 13, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/857

Abstract

An LED device includes first and second LED elements containing a lower layer of first conductivity type, an active layer, and an upper layer of second conductivity type, wherein the second LED element has third and fourth electrodes on the lower layer, recessed portion having a side surface exposing the upper, active and lower layers, and reaching the third electrode, fifth electrode disposed on the upper layer extending on the side surface of the recessed portion, and connected with the third electrode, and groove extending from the upper layer and reaching the active layer between the third and fourth electrodes to electrically separate the third electrode from the fourth electrode.