Optoelectronic semiconductor chip and method for the production thereof

US8969900B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Matthias Sabathil · Regensburg, DE
• Alexander Linkov · Regensburg, DE
• Christopher Kölper · Regensburg, DE
• Martin Straβburg · Donaustauf, DE
• Norwin von Malm · Nittendorf, DE

Key dates

• Filing date: Nov 2, 2011
• Grant date: Mar 3, 2015
• Expiry date: Nov 2, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/872
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring.