Photo detector consisting of tunneling field-effect transistors and the manufacturing method thereof
US8969911B2 · kind B2 · utility
1Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2012 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | Feb 9, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.