Semiconductor device and manufacturing method thereof
US8969921B2 · kind B2 · utility
4Cited by
0References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 18, 2013 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | Mar 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided with: a GaN layer; an anode electrode that forms a Schottky junction with a Ga face of the GaN layer; and an InGaN layer positioned between at least a part of the anode electrode and the GaN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.