Semiconductor devices with screening coating to inhibit dopant deactivation
US8969931B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2010 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | Nov 26, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/78
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device and a method for fabricating the semiconductor device. The device includes: a doped semiconductor having a source region, a drain region, a channel between the source and drain regions, and an extension region between the channel and each of the source and drain regions; a gate formed on the channel; and a screening coating on each of the extension regions. The screening coating includes: (i) an insulating layer that has a dielectric constant that is no greater than about half that of the extension regions and is formed directly on the extension regions, and (ii) a screening layer on the insulating layer, where the screening layer screens the dopant ionization potential in the extension regions to inhibit dopant deactivation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.