Semiconductor device
US8970016B2 · kind B2 · utility
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26Claims
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Assignee
Inventors
Key dates
| Filing date | Jun 1, 2012 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | Jun 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes at least one termination portion provided adjacent to the drift portion. The at least one termination portion comprises a Super Junction structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.