Method of making self-aligned nanotube contact structures
US8973260B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 11, 2009 |
| Grant date | Mar 10, 2015 |
| Priority date | — |
| Expiry date | Oct 18, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49204
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming nanotube contact structures may include forming an interconnect layer over a portion of a layer of a microelectronics device and forming a nanotube layer over a portion of the interconnect layer. The nanotube layer may define openings through the nanotube layer. The method also may include forming self-aligned electrodes in the openings of the nanotube layer such that the self-aligned electrodes are formed only in openings in the nanotube layer that substantially reside over metal filled vias of the microelectronics device. In some examples, the self-aligned electrodes may be formed on the metal in the vias, and the self-aligned electrodes may not be formed in openings that do not reside over the metal filled vias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.