Method for fabrication of ceramic dielectric films on copper foils
US8974856B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2010 |
| Grant date | Mar 10, 2015 |
| Priority date | — |
| Expiry date | Oct 17, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/266
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a method for fabricating a ceramic film on a copper foil. The method comprises applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250° C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450° C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750° C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas. In some embodiments an additional layer of the sol-gel composition is applied onto the ceramic film and the drying, pyrolyzing and crystallizing steps are repeated for the additional layer to build up a thicker ceramic layer on the copper foil. The process can be repeated one or more times if desired.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.