Method of manufacturing semiconductor device
US8975164B2 · kind B2 · utility
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1References
5Claims
0Family size
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Key dates
| Filing date | May 30, 2013 |
| Grant date | Mar 10, 2015 |
| Priority date | — |
| Expiry date | Jun 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of manufacturing a semiconductor device. The method at least comprises the following steps. First, the semiconductor device, which comprises a gate, a gate dielectric layer, an active layer, a source and a drain, is manufactured. However, the semiconductor device has a plurality of defects, and the active layer is a metal oxide thin film. After annealing the semiconductor device, it will be transferred into a chamber. A final step of injecting a supercritical fluid carried with a co-solvent into the chamber is then performed to modify the abovementioned defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.