Semiconductor device and manufacturing method

US8975167B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International Corp. · CN

Inventor

• Zhongshan Hong · Shanghai, CN

Key dates

• Filing date: Nov 27, 2012
• Grant date: Mar 10, 2015
• Expiry date: May 5, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

A fabrication process of a semiconductor device is disclosed. The method includes providing a semiconductor substrate with a first insulation layer formed on the semiconductor substrate and a fin formed on the surface of the first insulation layer, and forming a fully-depleted semiconductor layer on sidewalls of the fin, and the fully-depleted semiconductor layer having a material different from that of the fin. The method also includes forming a second insulation layer covering the fully-depleted semiconductor layer, and removing the fin to form an opening exposing sidewalls of the fully-depleted semiconductor layer. Further, the method includes forming a gate dielectric layer on part of the sidewalls of the fully-depleted semiconductor layer such that the part of the sidewalls of the fully-depleted semiconductor layer form channel regions of the semiconductor device, and forming a gate electrode layer covering the gate dielectric layer.