Asymmetrical bidirectional protection component
US8975661B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 16, 2011 |
| Grant date | Mar 10, 2015 |
| Priority date | — |
| Expiry date | Aug 16, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/983
Abstract
An asymmetrical bidirectional protection component formed in a semiconductor substrate of a first conductivity type, including: a first implanted area of the first conductivity type; a first epitaxial layer of the second conductivity type on the substrate and the first implanted area; a second epitaxial layer of the second conductivity type on the first epitaxial layer, the second layer having a doping level different from that of the first layer; a second area of the first conductivity type on the outer surface of the epitaxial layer, opposite to the first area; a first metallization covering the entire lower surface of the substrate; and a second metallization covering the second area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.