N-channel multi-time programmable memory devices
US8975685B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2012 |
| Grant date | Mar 10, 2015 |
| Priority date | — |
| Expiry date | Nov 27, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
N-channel multi-time programmable memory devices having an N-conductivity type substrate, first and second P-conductivity type wells in the N-conductivity type substrate, N-conductivity type source and drain regions formed in the first P-conductivity type well, the source and drain regions being separated by a channel region, an oxide layer over the N-conductivity type substrate; and a floating gate extending over the channel region and over the second P-conductivity type well in the N-conductivity type substrate, the multi-time programmable memory cell being programmable by hot electron injection and erasable by hot hole injection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.