Metal oxide semiconductor devices with multiple drift regions
US8975693B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2012 |
| Grant date | Mar 10, 2015 |
| Priority date | — |
| Expiry date | Nov 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
A semiconductor device includes a semiconductor substrate of a first conductivity type, a buried layer a second conductivity type different from the first conductivity type on the substrate and an epitaxial layer of the second conductivity type on the buried layer. The device further includes a pocket well of the first conductivity type in the epitaxial layer, a first drift region in the epitaxial layer at least partially overlapping the pocket well, a second drift region in the epitaxial layer and spaced apart from the first drift region, and a body region of the first conductivity type in the pocket well. A gate electrode is disposed on the body region, the pocket well and the first drift region and has an edge overlying the epitaxial region between the first and second drift regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.