MEMS device and method of manufacture
US8975722B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2014 |
| Grant date | Mar 10, 2015 |
| Priority date | — |
| Expiry date | May 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/903
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A MEMS logic device comprising agate which pivots on a torsion hinge, two conductive channels on the gate, one on each side of the torsion hinge, source and drain landing pads under the channels, and two body bias elements under the gate, one on each side of the torsion hinge, so that applying a threshold bias between one body bias element and the gate will pivot the gate so that one channel connects the respective source and drain landing pad, and vice versa. An integrated circuit with MEMS logic devices on the dielectric layer, with the source and drain landing pads connected to metal interconnects of the integrated circuit. A process of forming the MEM switch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.