Flash memory device and method of programming the same
US8976584B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2013 |
| Grant date | Mar 10, 2015 |
| Priority date | — |
| Expiry date | Jun 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is provided for programming a flash memory device including memory cells formed in a direction perpendicular to a substrate, a first sub word line connected to first memory cells and selectable by a first selection line, and a second sub word line connected to second memory cells and selectable by a second selection line, the first and second memory cells being formed at the same level and being supplied with a program voltage at the same time. The method includes performing LSB program operations on the first and second sub word lines by enabling the first and second selection lines, respectively; performing CSB program operations on the first and second sub word lines by enabling the first and second selection lines, respectively; and performing MSB program operations on the first and second sub word lines by enabling the first and second selection lines, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.