Patent · US Active

Edge-emitting semiconductor laser

US8976829B2 · kind B2 · utility

4Cited by

6References

16Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Harald Koenig · Bernhardswald, DE
Uwe Strauss · Bad Abbach, DE
Wolfgang Reill · Pentling, DE

Key dates

Filing date	May 9, 2011
Grant date	Mar 10, 2015
Priority date	—
Expiry date	Sep 15, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/22
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An edge-emitting semiconductor laser is specified. A semiconductor body includes an active zone suitable for producing electromagnetic radiation. At least two facets on the active zone form a resonator. At least two contact points are spaced apart from one another in a lateral direction by at least one intermediate region and are mounted on an outer face of the semiconductor body.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.