Apparatus for chemical vapor deposition
US8980006B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2011 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Nov 28, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45559
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for chemical vapor deposition is disclosed. An aspect of the present invention provides an apparatus for chemical vapor deposition that includes: a process chamber configured to demarcate a reaction space; a back plate placed above the reaction space and having a gas inlet in a middle thereof; a gas diffusion member arranged below and separated from the gas inlet and coupled to the back plate by a first coupling member and configured to diffuse process gas supplied through the gas inlet; a shower head placed below and separated from the back plate and the gas diffusion member and having a middle part thereof coupled to the gas diffusion member by a second coupling member and having a plurality of spray holes perforated therein; and a susceptor arranged below and separated from the shower head and supporting a substrate. The gas diffusion member has a plurality of gas guiding holes that vertically penetrate the gas diffusion member such that the process gas supplied through the gas inlet is diffused toward a lower side of the gas diffusion member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.