Etching liquid for a copper/titanium multilayer thin film
US8980121B2 · kind B2 · utility
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3References
18Claims
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Key dates
| Filing date | Jan 28, 2011 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Jan 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/067
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, and a method of using it for etching a multilayer thin film containing a copper layer and a titanium layer, that is, an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, which comprises (A) hydrogen peroxide, (B) nitric acid, (C) a fluoride ion source, (D) an azole, (E) a quaternary ammonium hydroxide and (F) a hydrogen peroxide stabilizer and has a pH of from 1.5 to 2.5, and a etching method of using it.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.