Patent · US Active

Method of manufacturing graphene substrate, and graphene substrate

US8980217B2 · kind B2 · utility

4Cited by

0References

18Claims

0Family size

Assignee

NEC CORPORATION · JP

Inventors

Hidefumi Hiura · Tokyo, JP
Kazuhito Tsukagoshi · Saitama, JP

Key dates

Filing date	Nov 25, 2011
Grant date	Mar 17, 2015
Priority date	—
Expiry date	Nov 25, 2031

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/775
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Provided is a graphene substrate, which is manufactured by: bringing a metal layer into contact with a carbon-containing layer and heating the metal layer to dissolve carbon in the carbon-containing layer into the metal layer; and cooling the metal layer to precipitate the carbon in the metal layer as graphene on any substrate surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.