Photolithography method using a chemically-amplified resist
US8980537B2 · kind B2 · utility
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Key dates
| Filing date | Sep 4, 2012 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Jan 24, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0392
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photolithography method, including the steps of: S1) depositing, on the upper surface of a wafer, a chemically-amplified resist; S2) exposing the resist to a sensitizing radiation through a mask, to generate acid compounds in the exposed regions; S3) heating the resist, to have the acid compounds react with dissolution-inhibiting groups; and S5) developing the resist; and including, after step S3, a step of neutralization, S4, of the acid compounds which have not reacted at step S3.
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