Semiconductor device and manufacturing method of semiconductor device
US8980671B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2012 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Feb 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A manufacturing method of a semiconductor device according to embodiments includes forming a photodiode layer, which is an active region including a photodiode, on a main surface of a first substrate, forming a wiring layer, which includes a wire and a dielectric layer covering the wire, on the photodiode layer, and forming a dielectric film on the wiring layer. The manufacturing method of the semiconductor device according to the embodiments further includes bonding a second substrate to the dielectric film of the first substrate so that a crystal orientation of the photodiode layer matches a crystal orientation of the second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.