Method of manufacturing a semiconductor apparatus
US8980728B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2012 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Jul 13, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor apparatus is disclosed. A first-type doped layer, a second-type doped layer, and an internal electrical connection layer are formed. The internal electrical connection layer is deposited and electrically coupled between the first-type doped layer and the second-type doped layer. In one embodiment, the internal electrical connection layer is formed by using a group IV based precursor and nitrogen based precursor. In another embodiment, the internal electrical connection layer is formed by a mixture comprising a carbon-contained doping source, and the internal electrical connection layer has a carbon concentration greater than 1017 atoms/cm3. In a further embodiment, the internal electrical connection layer is formed at a temperature lower than those of the first-type doped layer and the second-type doped layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.