Semiconductor devices and methods of manufacturing the same
US8980736B2 · kind B2 · utility
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8References
7Claims
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Key dates
| Filing date | Feb 25, 2014 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Feb 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A method of manufacturing a semiconductor device may include: forming active patterns of pillar-shapes upward protruding from a substrate, the active patterns fully doped with dopants of one conductivity type; forming a gate electrode extending in one direction, the gate electrode overlapped with sidewalls of the active patterns; and forming a gate insulating layer between the gate electrode and the active patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.