Interlayer design for epitaxial growth of semiconductor layers
US8981211B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2009 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Mar 13, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interlayer structure that, in one implementation, includes a combination of an amorphous or nano-crystalline seed-layer, and one or more metallic layers, deposited on the seed layer, with the fcc, hcp or bcc crystal structure is used to epitaxially orient a semiconductor layer on top of non-single-crystal substrates. In some implementations, this interlayer structure is used to establish epitaxial growth of multiple semiconductor layers, combinations of semiconductor and oxide layers, combinations of semiconductor and metal layers and combination of semiconductor, oxide and metal layers. This interlayer structure can also be used for epitaxial growth of p-type and n-type semiconductors in photovoltaic cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.