Thin film transistor, method of manufacturing thin film transistor, display, and electronic apparatus
US8981368B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 2, 2013 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Feb 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0312
Abstract
A thin film transistor includes: a gate electrode, a source electrode, and a drain electrode; an oxide semiconductor layer provided on one side of the gate electrode with an insulating film in between, the oxide semiconductor layer being provided in a region not facing the source electrode and the drain electrode and being electrically connected to the source electrode and the drain electrode; and a low resistance oxide layer provided in a region facing the source electrode and in a region facing the drain electrode, the regions being adjacent to the oxide semiconductor layer, and the low resistance oxide layer having an electric resistivity lower than an electric resistivity of the oxide semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.