Semiconductor device
US8981370B2 · kind B2 · utility
12Cited by
24References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2013 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Feb 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
Abstract
A semiconductor device which has stable electrical characteristics and high reliability is provided. The semiconductor device includes a gate electrode over an insulating surface, a gate insulating film over the gate electrode, a semiconductor film which is over the gate insulating film and overlaps with the gate electrode, and a protective insulating film over the semiconductor film; and the protective insulating film includes a crystalline insulating film and an aluminum oxide film over the crystalline insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.