Semiconductor device
US8981374B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2014 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Jan 23, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2203/04108
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.