Semiconductor structure including buffer with strain compensation layers
US8981382B2 · kind B2 · utility
9Cited by
3References
36Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 6, 2013 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Mar 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a substrate and a semiconductor buffer structure overlying the substrate. The semiconductor buffer structure includes a semiconductor body of a gallium nitride material, and a stack of strain compensation layers. The stack of strain compensation layers includes a layer of a first semiconductor material with an in-plane lattice constant that is smaller than a lattice constant of the semiconductor body, and a layer of a second semiconductor material with an in-plane lattice constant that is greater than the lattice constant of the semiconductor body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.