Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same
US8981395B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2013 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Dec 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.