Semiconductor magnetic field sensors
US8981442B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2013 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Dec 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/60
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor magnetic field sensor comprising a semiconductor well on top of a substrate layer is disclosed. The semiconductor well includes a first current collecting region and a second current collecting region and a current emitting region placed between the first current collecting region and the second current collecting region. The semiconductor well also includes a first MOS structure, having a first gate terminal, located between the first current collecting region and the current emitting region and a second MOS structure, having a second gate terminal, located between the current emitting region and the second current collecting region. In operation, the first gate terminal and the second gate terminal are biased for increasing a deflection length of a first current and of a second current. The deflection length is perpendicular to a plane defined by a surface of the semiconductor magnetic field sensor and parallel to a magnetic field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.