Nonvolatile memory device and method for fabricating the same
US8981453B2 · kind B2 · utility
6Cited by
6References
39Claims
0Family size
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Key dates
| Filing date | Dec 2, 2010 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Jul 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6891
Abstract
A nonvolatile memory device includes a unit cell with a transistor and a capacitor. The transistor is disposed on a substrate having a tunneling region and a channel region and includes a floating gate crossing both the tunneling region and the channel region. The capacitor is coupled to the floating gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.