Semiconductor device
US8981462B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 3, 2013 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Sep 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
According to one embodiment, a semiconductor device includes a semiconductor layer having an opening formed therein, a first insulating layer disposed on a bottom surface of the opening and on a sidewall of the opening, a second insulating layer disposed on the sidewall of the opening above the first insulating layer, the second insulating layer being thinner than the first insulating layer, a field plate electrode disposed on the first insulating layer and the second insulating layer and having a recess extending from an upper surface of the field plate electrode towards the bottom surface of the opening, and a first layer disposed in the recess and including a material that is different from a material of the field plate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.