Semiconductor device and manufacturing method of the same
US8981470B2 · kind B2 · utility
16Cited by
1References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 6, 2013 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Mar 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The performance of power semiconductor device of partial gate type structure may be improved by providing the source region only adjacent the gate electrodes in the structure, and providing the contact spaced from the gate by the source. The device includes a plurality of field plate electrodes which extend inwardly of the drift layer, a second field plate electrode disposed between the contact and one of the first field plate electrodes, and a gate electrode located between the source and a second one of the first field plate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.