Semiconductor device comprising a crack stop structure
US8981551B2 · kind B2 · utility
3Cited by
2References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2013 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Sep 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/131
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may include at least one pad adjacent a top surface of the device, and a metal crack stop structure below the at least one pad. The metal crack structure may have an inner envelope and an outer envelope, and may be configured to be vertically aligned with the at least one pad so that an edge of the at least one pad is between the inner and outer envelopes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.