Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates
US8982613B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 17, 2013 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Jun 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/329
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic device includes a pinned polarizing magnetic layer having a magnetic vector parallel to a plane of the pinned polarizing magnetic layer. The magnetic device also includes a free layer, separated from the polarizing magnetic layer by a first non-magnetic layer, having a magnetization vector with a changeable magnetization direction. The changeable magnetization vector is configured to change to a first state upon application of a first current of a first polarity and to change to a second state upon application of a second current of a second, opposite polarity. The magnetic device also has a reference layer having a magnetic vector perpendicular to the plane of the reference layer and separated from the free layer by a second non-magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.