Sense amplifier circuit and semiconductor device
US8982652B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2012 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Nov 13, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4091
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A single-ended sense amplifier circuit of the invention comprises first and second MOS transistors and first and second precharge circuits. The first MOS transistor drives the bit line to a predetermined voltage and switches connection between the bit line and a sense node and the second MOS transistor whose gate is connected to the sense node amplifies the signal via the first MOS transistor. The first precharge circuit precharges the bit line to a first potential and the second precharge circuit precharges the sense node to a second potential. Before sensing operation, the bit line is driven to the predetermined voltage when the above gate voltage is controlled to decrease. The predetermined voltage is appropriately set so that a required voltage difference at the sense node between high and low levels can be obtained near a changing point between charge transfer/distributing modes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.