Semiconductor lasers and etched-facet integrated devices having H-shaped windows
US8982921B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2013 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Feb 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/22
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An edge-emitting optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide extending between first and second etched end facets. The first etched end facet is disposed in a first window, while the second etched end facet is disposed in a second window. The first etched end facet extends between a pair of alcoves in the first window, and the second etched end facet extends between a pair of alcoves in the second window. An integrated device in which two such structures are provided has an H-shaped window where the two structures adjoin each other. The structure can be fabricated using a process that involves a first mask to form the ridge waveguide and then a second mask and an etching process to form the windows.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.