Semiconductor device, method of manufacturing the same, in-millimeter-wave dielectric transmission device, method of manufacturing the same, and in-millimeter-wave dielectric transmission system
US8983399B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2009 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Jun 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is an in-millimeter-wave dielectric transmission device. The in-millimeter-wave dielectric transmission device includes a semiconductor chip provided on one interposer substrate and capable of in-millimeter-wave dielectric transmission, an antenna structure connected to the semiconductor chip, two semiconductor packages including a molded resin configured to cover the semiconductor chip and the antenna structure, and a dielectric transmission path provided between the two semiconductor packages to transmit a millimeter wave signal. The semiconductor packages are mounted such that the antenna structures thereof are arranged with the dielectric transmission path interposed therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.