Diamond
US8986645B2 · kind B2 · utility
3Cited by
5References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2006 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Feb 21, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of producing a CVD single crystal diamond layer on a substrate includes adding into a DVD synthesis atmosphere a gaseous source comprising silicon. The method can be used to mark the diamond material, for instance to provide means by which its synthetic nature can more easily be determined. It can also be exploited to generate single crystal diamond material of high color.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.