Diamond material
US8986646B2 · kind B2 · utility
6Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2010 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Mar 9, 2032 |
Classification
- Technology area (CPC A)Human Necessities
- CPC primaryA44C17/008
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of introducing NV centers in single crystal CVD diamond material is described. One step of the method comprises irradiating diamond material that contains single substitutional nitrogen to introduce isolated vacancies into the diamond material in a concentration of at least 0.05 ppm and at most 1 ppm. Another step of the method comprises annealing the irradiated diamond to form NV centers from at least some of the single substitutional nitrogen defects and the introduced isolated vacancies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.