Antireflective coatings for photovoltaic applications
US8987039B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2008 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Feb 5, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process is provided for making a photovoltaic device comprising a silicon substrate comprising a p-n junction, the process comprising the steps of: forming an amorphous silicon carbide antireflective coating over at least one surface of the silicon substrate by chemical vapor deposition of a composition comprising a precursor selected from the group consisting of an organosilane, an aminosilane, and mixtures thereof, wherein the amorphous silicon carbide antireflective coating is a film represented by the formula SivCxNuHyFz, wherein v+x+u+y+z=100%, v is from 1 to 35 atomic %, x is from 5 to 80 atomic %, u is from 0 to 50 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.