Oxide semiconductor thin film transistor, manufacturing method, and display device thereof
US8987074B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2013 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Feb 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An oxide semiconductor thin film transistor, a manufacturing method and a display device thereof are disclosed. An oxide semiconductor thin film transistor comprises a gate insulating layer (22), an oxide semiconductor layer (24) and a blocking layer (25), wherein a first transition layer (23) is formed between the gate insulating layer (22) and the oxide semiconductor layer (24), the oxygen content of the first transition layer (23) is higher than the oxygen content of the oxide semiconductor layer (24). The oxide semiconductor thin film transistor enhances the interface characteristic and the lattice matching between the oxide semiconductor layer (24) and the blocking layer (25) to improve the stability of the thin film transistor better.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.